Fred Huang received the B.S. degree in physics from Pekin University, Beijing, in 1986, the M.S. degree in physics from Fudan University, Shanghai, in 1988, and the Ph.D. degree from Univ. of Illinois at Urbana-Champaign (UIUC), Illinois, in 1994, majoring in electronics materials. 

        He joined Univ. of California, Los Angeles (UCLA), CA, as a post-doctoral research fellow in 1994 working on SiGe and SiGeC photodetectors.  In Aug. 1997, he joined IBM Corporation, Microelectronics Division. As an advisory engineer he has been involved in the process development of advanced SiGe BiCMOS technology in IBM Advanced Semiconductor Technology Center (ASTC), Hopewell Junction, NY, for more than three generations including the 0.18mm 7HP.      

        Dr. Huang is the recipient of T.D. Lee Physics Award, Fudan Univ., 1986, the Overseas Research Student (ORS) Award, British council, 1989, and IBM Microelectronics General Manager’s Excellence Award, 2000. He has authored (or co-authored) two book chapters on Si processing and devices and over 50 research papers. He holds 10 US patents.